10:00 〜 10:15 ▲ [12a-M121-5] Reduction of the density of defects at the SiO2/Ga2O3 MOS interface by the combination of high-temperature O2 annealing and low-temperature H2 annealing 〇QIN MAO1、Eiki Suzuki1、Atsushi Tamura1、Koji Kita1 (1.The Univ. of Tokyo)