Shingo Genchi

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Speaker, Author, Co-Author

Sun. Mar 10, 2019 9:00 AM - 11:45 AM W641 (W641)

Oral presentation
| 6 Thin Films and Surfaces
| 6.3 Oxide electronics

[10a-W641-1~10] 6.3 Oxide electronics

10:00 AM - 10:15 AM

[10a-W641-5] Device size dependence on the metal-insulator transition-mediated resistivity change
in VO₂ grown on hexagonal boron nitride

〇Shingo Genchi¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Hidekazu Tanaka¹ (1.Osaka Univ., 2.NIMS)