[10a-W641-1~10] 6.3 Oxide electronics

[10a-W641-5] Device size dependence on the metal-insulator transition-mediated resistivity change
in VO₂ grown on hexagonal boron nitride

〇Shingo Genchi¹, Mahito Yamamoto¹, Teruo Kanki¹, Kenji Watanabe², Takashi Taniguchi², Hidekazu Tanaka¹ (1.Osaka Univ., 2.NIMS)

Keywords:metal-insulator transition, vanadium dioxide, hexagonal boron nitride

We investigated the device size effect on the resistance change in VO₂ on hexagonal boron nitride(hBN). We fabricated two microwires of VO₂ on hBN in different sizes in this research. As a result, we observed resistance "jumps" around the transition temperature in both of the microwires, and the smaller-sized wire exhibited relatively higher resistance jump. This suggests that steep resistivity change can be realized when the size is in several hundred nanometer order.