Hayato Yoshida

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Speaker, Author, Co-Author

Sun. Mar 10, 2019 1:45 PM - 5:00 PM S221 (S221)

Oral presentation
| 13 Semiconductors
| 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[10p-S221-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

3:45 PM - 4:00 PM

[10p-S221-6] Design and analysis of virtually nonvolatile retention SRAM using dual power-switches

〇Hayato Yoshida¹, Daiki Kitagata¹, Shuu'ichiro Yamamoto¹, Satoshi Sugahara¹ (1.FIRST, Tokyo Inst. of Tech.)