3:00 PM - 3:15 PM
[11p-W541-7] c-plane AlN on a-plane sapphire fabricated by sputtering and high temperature annealing
〇Yusuke Hayashi1, Kaito Fujikawa2, Kenjiro Uesugi3, Kanako Shojiki2, Hideto Miyake1,2 (1.Grad. School of RIS, Mie Univ., 2.Grad. School of Eng., Mie Univ., 3.SPORR, Mie Univ.)