Session information

Oral presentation

Code-sharing session » 【CS.5】Code-sharing Session of 6.1 & 13.3 & 13.5

[10p-W631-1~12] CS.5 Code-sharing Session of 6.1 & 13.3 & 13.5

Sun. Mar 10, 2019 1:45 PM - 5:00 PM W631 (W631)

Masaharu Kobayashi(Univ. of Tokyo), Takao Shimizu(Tokyo Tech), Shosuke Fujii(Toshiba Memory)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:45 PM - 2:00 PM

[10p-W631-1] The effect of O₂ partial pressure during sputtering on crystal growth and structure of HfO₂-based ferroelectric thin films

〇Kenshi Takada¹, Yuki Saho¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

2:00 PM - 2:15 PM

[10p-W631-2] The effect of O₂ partial pressure during sputtering on the crystallographic and
electrical properties of HfO₂-based thin films

〇Yuki Saho¹, Kenshi Takada¹, Daisuke Kiriya¹, Takeshi Yoshimura¹, Atsushi Ashida¹, Norifumi Fujimura¹ (1.Osaka Pref. Univ.)

2:15 PM - 2:30 PM

▲ [10p-W631-3] The influence of sputtering condition for ferroelectric HfO₂ directly deposited on Si(100) by RF magnetron sputtering

〇MinGee Kim¹, Masakazu Kataoka¹, Rengie Mark D. Mailig¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech.)

2:30 PM - 2:45 PM

[10p-W631-4] The role of dopant in ferroelectric HfO₂

〇Yuki Mori¹, Tomonori Nishimura¹, Takeaki Yajima¹, Shinji Migita², Akira Toriumi¹ (1.Univ. of Tokyo, 2.AIST)

2:45 PM - 3:00 PM

[10p-W631-5] Mechanism of ferroelectric phase reduction in HfO₂ due to oxidizing thermal treatment

〇Takeaki Yajima¹, Yuki Mori¹, Tomonori Nishimura¹, Akira Toriumi¹ (1.The Univ. of Tokyo)

3:00 PM - 3:15 PM

[10p-W631-6] Stability of orthorhombic and monoclinic HfO₂in charged states: first-principles study

〇Yuto Shiraishi¹, Riki Nagasawa¹, Masaaki Aradai², Kenji Shiraishi², Takashi Nakayama¹ (1.Chiba Univ., 2.Nagoya Univ.)

3:30 PM - 3:45 PM

[10p-W631-7] [Young Scientist Presentation Award Speech] Clarification of Endurance Failure Mechanisms for HfO₂-based Ferroelectric Tunnel Junction Memory

〇Marina Yamaguchi¹, Shosuke Fujii¹, Shoichi Kabuyanagi¹, Yuuichi Kamimuta¹, Tsunehiro Ino¹, Yasushi Nakasaki¹, Riichiro Takaishi¹, Reika Ichihara¹, Masumi Saitoh¹ (1.Toshiba Memory Corp.)

3:45 PM - 4:00 PM

[10p-W631-8] Ferroelectricity of Hf_xZr₁_−xO₂ thin films fabricated using low temperature process at 300 °C

〇Takashi Onaya^1,2,3, Toshihide Nabatame², Naomi Sawamoto¹, Akihiko Ohi², Naoki Ikeda², Takahiro Nagata², Atsushi Ogura¹ (1.Meiji Univ., 2.NIMS, 3.JSPS Research Fellow DC)

4:00 PM - 4:15 PM

△ [10p-W631-9] Unipolar Switching Characteristics of MIS Structure with Antiferroelectric ZrO₂

〇(M2)Yusaku Tagawa¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

4:15 PM - 4:30 PM

[10p-W631-10] Origin of Steep-Subthreshold Swing Behaviors in Ferroelectric FETs

〇Shinji Migita¹, Hiroyuki Ota¹, Akira Toriumi² (1.AIST, 2.Univ. Tokyo)

4:30 PM - 4:45 PM

▼ [10p-W631-11] Polarization Switching as the Cause of Steep Subthreshold Slope in Ferroelectric FETs

〇(D)Chengji Jin¹, Takuya Saraya¹, Toshiro Hiramoto¹, Masaharu Kobayashi¹ (1.IIS, Univ. of Tokyo)

4:45 PM - 5:00 PM

[10p-W631-12] Simulation on Coherency of Polarization in Ferroelectric Negative Capacitance and Its Evolution Based on TCAD

〇Hiroyuki Ota¹, Tsutomu Ikegami¹, Koichi Fukuda¹, Junichi Hattori¹, Hidehiro Asai¹, Kazuhiko Endo¹, Shinji Migita¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

Authentication

Password authentication.
Password is required to view the PDF. Please enter a password to authenticate.

The password has been sent to pre-registrants.
For onsite registrants, please refer to the back of the name badge.
The password will be sent to all JSAP members in September 2019

Please log in with your participant account.
» Participant Log In

▲