Session information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 9:00 AM - 11:30 AM S011 (South Lecture Bldg.)

Kentaro Kaneko(Kyoto Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[11a-S011-1] First-principles Study for Oxide Semiconductors with Corundum Structures

〇Kazuyuki Uno¹, Taiki Nakamura¹, Ichiro Tanaka¹ (1.Wakayama Univ.)

9:15 AM - 9:30 AM

[11a-S011-2] Stabilization of α-Ga₂O₃ on m-plane α-Al₂O₃ by Plasma-Assisted MBE

〇(DC)Riena Jinno¹, Yongjin Cho¹, Kevin Lee¹, Vladimir Protasenko¹, Huili Xing¹, Debdeep Jena¹ (1.Cornell Univ.)

9:30 AM - 9:45 AM

[11a-S011-3] Purification of β-Ga₂O₃ Crystals by the Zone-Refining Method

〇Toshimitsu Ito¹, Yasuko Ozaki¹, Yasuhide Tomioka¹, Hideki Inaba¹, Hideyuki Watanabe¹ (1.AIST)

9:45 AM - 10:00 AM

[11a-S011-4] Preparation of Ga₂O₃: Cd nanocrystals by chemical synthesis and band gap control

〇Takuya Funakoshi¹, Akira Tsuno², Hiroyuki Ohtani³, Kenichi Shudo^1,2, Kohki Mukai^1,2 (1.Yokohama National Univ.Graduate School of Engineering Science, 2.Yokohama National Univ.Graduate School of Engineering, 3.Yokohama National Univ.Graduate School of Environment and Information Sciences)

10:00 AM - 10:15 AM

[11a-S011-5] Low temperature transport property for the beta-Ga₂O₃ single crystals

〇Yasuhide Tomioka¹, Yasuko Ozaki¹, Hideki Inaba¹, Toshimitsu Ito¹ (1.AIST)

10:30 AM - 10:45 AM

[11a-S011-6] Local structure of Sn dopant β Ga oxide

〇Kazushi Miki¹, N. Happo², K. Kimura³, K. Sasaki⁴, Y. Tang¹, K. Nawata¹, H. Kitafuji¹, S. Kitamura¹, H. Ozaki³, K. Hisatsune², R. Hisatsune², H. Tajiri⁵, S. Yamakoshi⁶, K. Hayashi³, A. Kuramata⁴ (1.Univ. Hyogo, 2.Hiroshima City Univ., 3.NITech, 4.Novel Crystal Tech., 5.JASRI, 6.Tamura Corp.)

10:45 AM - 11:00 AM

[11a-S011-7] Composition and substrate dependence of crystal and electronic structures of (Ga_xIn_1-x)₂O₃ alloy system

〇Takeshi Hoga^1,2, Toyohiro Chikyow², Takahiro Nagata² (1.NIT,Tsuruoka College, 2.NIMS)

11:00 AM - 11:15 AM

[11a-S011-8] Crystallization of GaON thin films

〇Housei Akazawa¹ (1.NTT Device Innovation Center)

11:15 AM - 11:30 AM

[11a-S011-9] 【Highlight】High-aspect etching of b-Ga2O3 by hydrogen atmosphere anisotropic thermal etching (HEATE)

〇Yuuki Ooe¹, Yuske Namae¹, Akihiro Matsuoka¹, Yusei Kawasaki¹, Daichi Ito¹, Yuuta Moriya¹, Rie Togashi¹, Akihiko Kikuchi^1,2 (1.Sophia Univ, 2.Sophia Nanotechnology Research Center)

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