Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[9a-W541-1~12] 15.4 III-V-group nitride crystals

Sat. Mar 9, 2019 9:00 AM - 12:15 PM W541 (W541)

Toru Akiyama(Mie Univ.), Tomoyuki Tanikawa(Tohoku Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

△ [9a-W541-1] Crystal growth and evaluation of polar-plane-free faceted InGaN LED structure

〇(DC)Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

9:15 AM - 9:30 AM

△ [9a-W541-2] MOCVD growth of n-GaN cap layer on MQS-LEDs

〇Nanami Goto¹, Naoki Sone^1,3, Kazuyoshi Iida^1,4, Weifang Lu¹, Atsushi Suzuki¹, Kyohei Nokimura¹, Minoru Takebayashi¹, Hideki Murakami¹, Mizuki Terazawa¹, Masaki Ohya^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing CO., 4.Toyoda Gosei Co.)

9:30 AM - 9:45 AM

△ [9a-W541-3] Device characterization of Multi-Quantum-Shell LED using Tunnel Junction

〇Hideki Murakami¹, Atsushi Suzuki¹, Kyohei Nokimura¹, Minoru Takebayashi¹, Nanami Goto¹, Mizuki Terazawa¹, Weifang Lu¹, Naoki Sone^1,3, Kazuyoshi Iida^1,4, Masaki Ohya^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center,Nagoya Univ., 3.Koito Manufacturing, 4.Toyoda Gosei)

9:45 AM - 10:00 AM

[9a-W541-4] Study on electrode for p-type shell of multi-quantum-shell LED

〇Atsushi Suzuki¹, Hideki Murakami¹, Kyohei Nokimura¹, Minoru Takebayashi¹, Nanami Goto¹, Mitsuki Terazawa¹, Weifang Lu¹, Naoki Sone^1,3, Kazuyoshi Iida^1,4, Masaki Ohya^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing CO.,LTD, 4.Toyoda Gosei Co.,Ltd)

10:00 AM - 10:15 AM

▲ [9a-W541-5] Low-damage Fabrication of InGaN/GaN Nanopillars by Neutral Beam Etching: Towards Directional Micro-LED in Top-down Structure

〇Kexiong Zhang¹, T. Takahashi¹, N. Kumagai¹, G. W. Cong¹, D. Ohori², K. Endo¹, M. Shimizu^1,3, S. Samukawa², X. L. Wang^1,3 (1.AIST, 2.Tohoku Univ., 3.Nagoya Univ.)

10:15 AM - 10:30 AM

△ [9a-W541-6] Control of surface plasmon resonance wavelength by double metal Ag / Au nanoparticles for high efficiency green LED

〇Ryoya Mano¹, Dong-Pyo Han¹, Kengo Yamamoto¹, Seiji Ishimoto¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ, 2.ARC, Nagoya Univ)

10:45 AM - 11:00 AM

[9a-W541-7] Atomic resolution structural analysis of Mg segregation at a pyramidal inversion domain in a p-GaN epitaxial layer

〇Kenji Iwata¹, Tetsuo Narita², Masahiro Nagao^1,3, Kazuyoshi Tomita², Keita Kataoka², Tetsu Kachi², Nobuyuki Ikarashi^1,3 (1.Nagoya Univ., 2.TOYOTA Central R&D Labs., 3.Nagoya Univ. IMass)

11:00 AM - 11:15 AM

[9a-W541-8] Direct Observation of Local Piezoelectric Lattice Distortion in a Nitride Semiconductor HEMT Device Using Synchrotron Radiation Nanobeam X-ray Diffraction Analysis

〇Akira Ueda¹, Tetsuya Tohei¹, Yuji Ando², Tamotsu Hashizume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

11:15 AM - 11:30 AM

△ [9a-W541-9] Operando Analysis of Local Piezoelectric Lattice Distortion in a Nitride Semiconductor HEMT Device Using Synchrotron Radiation Nanobeam X-ray Diffraction

〇Akira Ueda¹, Tetsuya Tohei¹, Yuji Ando², Tamotsu Hashidume², Yasuhiko Imai³, Kazushi Sumitani³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.RCIQE, Hokkaido Univ., 3.JASRI)

11:30 AM - 11:45 AM

△ [9a-W541-10] 【Highlight】Relationship between reverse leakage current of p-n diodes on GaN free-standing substrate and Mg existing around threading screw dislocations

〇Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Norihito Mayama⁴, Kazuya Toda⁴, Yoshihiro Sugawara⁵, Yao Yongzhao⁵, Yukari Ishikawa⁵, Yuto Ando¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,6,7 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.Toshiba Nanoanalysis Corp., 5.JFCC, 6.ARC, 7.VBL)

11:45 AM - 12:00 PM

[9a-W541-11] Relationship between reverse leakage current of p-n diodes on GaN free-standing substrate and impurities present on nanopipe surface

〇Shigeyoshi Usami¹, Atsushi Tanaka^2,3, Hayata Fukushima¹, Yuto Ando¹, Manato Deki², Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS, 3.NIMS, 4.ARC, 5.VBL)

12:00 PM - 12:15 PM

△ [9a-W541-12] Electronic structure analysis at threading dislocation and at m-plane surface of nanopipes in GaN thin films

〇Takashi Nakano¹, Kenta Chokawa¹, Masaaki Araidai^2,1, Kenji Shiraishi^2,1, Atsushi Oshiyama², Shigeyoshi Usami¹, Akira Kusaba³, Yoshihiro Kangawa^4,2, Atsushi Tanaka², Yoshio Honda^2,1, Hiroshi Amano^2,1 (1.Graduate School of Engineering, Nagoya Univ., 2.IMaSS, Nagoya Univ., 3.Graduate School of Engineering, Kyushu Univ., 4.Research Institute for Applied Mechanics Kyushu University)

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