The 66th JSAP Spring Meeting, 2019

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Poster presentation

13 Semiconductors » 13.2 Exploratory Materials, Physical Properties, Devices

[10a-PB2-1~18] 13.2 Exploratory Materials, Physical Properties, Devices

Sun. Mar 10, 2019 9:30 AM - 11:30 AM PB2 (PB)

9:30 AM - 11:30 AM

[10a-PB2-2] Reducing residual carrier density in Mg2Si crystal by in-situ annealing

〇Keigo Goushu1, Takuma Ishikawa1, Fuse Yutaro1, Ryouhei Masubuchi1, Fuoko Yaguchi1, Haruhiko Udono1 (1.Ibaraki Univ.)

Keywords:Semiconducting Silicide