The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[10a-S011-1~8] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sun. Mar 10, 2019 9:00 AM - 11:15 AM S011 (South Lecture Bldg.)

Tomoki Abe(Tottori Univ.)

9:15 AM - 9:30 AM

[10a-S011-2] Influence of V concentration on crystal orientation in solid-phase crystallization of ZnO/VZO/ZnO stacked films

〇(B)Shuhei Matsuzawa1, Kenta Shito2, Takeru Okada2, Tomoyuki Kawashima2, Katsuyoshi Washio2 (1.Sch. Eng., Tohoku Univ., 2.Grad. Sch. Eng., Tohoku Univ.)

Keywords:zinc oxide, vanadium, solid-phase crystallization

a面サファイア基板上でのZnO/V添加ZnO(VZO)/ZnO積層膜(総膜厚300 nm以上)の固相成長において、焼成後の膜全体のV濃度を制御することにより傾斜配向の抑制を図った。