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[10a-S224-4] Influence of beam plasma on divergence angle of low energy ion beam.
Keywords:ion beam, etching, plasma
Ion beam etching (IBE) is a method of etching by physical sputtering using a rare gas ion beam.
It is used for fabrication of magnetic ranndom access memory (MRAM) to avoid chemical damage to materials.
For the fabrication of nano-scale devices, low energy and large current beams are required. It is also required that the divergence angle distribution of beams be narrow.
In general, an IBE device is equipped with an electron source (PFC) using low temperature plasma for charge neutralization in order to prevent damage of charge-up of the device. In this study, we found that the divergence angle of beam varies depending on the condition of PFC, and investigated plasma parameters affecting divergence angle.
It is used for fabrication of magnetic ranndom access memory (MRAM) to avoid chemical damage to materials.
For the fabrication of nano-scale devices, low energy and large current beams are required. It is also required that the divergence angle distribution of beams be narrow.
In general, an IBE device is equipped with an electron source (PFC) using low temperature plasma for charge neutralization in order to prevent damage of charge-up of the device. In this study, we found that the divergence angle of beam varies depending on the condition of PFC, and investigated plasma parameters affecting divergence angle.