The 66th JSAP Spring Meeting, 2019

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3 Optics and Photonics » 3.7 Laser processing

[10a-W631-1~12] 3.7 Laser processing

Sun. Mar 10, 2019 9:00 AM - 12:15 PM W631 (W631)

Teppei Nishi(Toyota Central R&D Labs), Mizue Mizoshiri(Nagaoka Univ. Tech.)

11:45 AM - 12:00 PM

[10a-W631-11] pn junction properties of Si single crystal hyper-doped with sulfur by pulsed laser melting

〇Kenji Kawamoto1, Hiroki Hayase1, Tamao Aoki1, Ikurou Umezu1 (1.Konan Univ.)

Keywords:pulsed laser melting, solar cell, hyper-doping