4:00 PM - 6:00 PM
▼ [10p-PA8-6] Effect of CO2 and O3 treatment on directly Synthesized Graphene on Insulating Substrates at low temperature using Microwave Plasma Enhanced Chemical Vapor Deposition
Keywords:Direct graphene growth, Low temperature, MPCVD
Researchers are still in search of a better ways to synthesize graphene at lower temperatures directly on desired substrates to give an end to search of an alternative to Indium Tin Oxide (ITO) over a period of 20 years [1,2]. In this work, an attempted has been made to grow large area (2 x 2 cm) graphene directly on insulating substrates such as quartz, glass and SiO2/Si using magnetron generated microwave plasma CVD at substrate temperature 300oC.
Key to this work is use of 0.3 sccm CO2 during growth to put a control over vertical graphene growth generally forming carbon walls and 15-20 mins of O3 treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance (Fig.1). Optical microscope UV-Vis spectroscopy, Raman microscopy, X-ray Photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic force microscopy (AFM) measurements confirmed the formation of 1.2nm thick continuous graphene layer on glass, quartz and SiO2/Si with sheet resistance 1300 Ohm/sq and transmittance 80%. Although the formed graphene sheet resistance is near a kilo Ohm/sq at the moment, the sheet resistance is reduced to 200 Ohm/sq by doing process. This transfer free low-temperature synthesis approach is believed to explore new dimensions of graphene synthesis and applications[3].
Key to this work is use of 0.3 sccm CO2 during growth to put a control over vertical graphene growth generally forming carbon walls and 15-20 mins of O3 treatment on as-synthesized graphene to improve sheet carrier mobility and transmittance (Fig.1). Optical microscope UV-Vis spectroscopy, Raman microscopy, X-ray Photoelectron spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic force microscopy (AFM) measurements confirmed the formation of 1.2nm thick continuous graphene layer on glass, quartz and SiO2/Si with sheet resistance 1300 Ohm/sq and transmittance 80%. Although the formed graphene sheet resistance is near a kilo Ohm/sq at the moment, the sheet resistance is reduced to 200 Ohm/sq by doing process. This transfer free low-temperature synthesis approach is believed to explore new dimensions of graphene synthesis and applications[3].