[10p-S222-1~15] 12.4 Organic light-emitting devices and organic transistors

△ [10p-S222-5] Low Voltage Operation for Pentacene-based Pseudo-CMOS utilizing Threshold Voltage Control by N-doped LaB₆ Interfacial Layer

〇(D)Yasutaka Maeda¹, Kyung Eun Park¹, Yuki Komatsu¹, Shun-ichiro Ohmi¹ (1.Tokyo Tech)

Keywords:pentacene, nitrogen-doped LaB6, interfacial layer

Pentacene-based pseudo-CMOS utilizing threshold voltage (V_TH) control by nitrogen-doped LaB₆ interfacial layer (IL) was reported. In this paper, improvement of inverter characteristic of pseudo-CMOS was investigated by scaling. The drive OFET with L_D/W_D = 55 um/1500 um showed V_TH of -2.6 V, and the load OFET with L_L/W_L = 55 um/100 um showed V_TH of 2.1 V in the fabricated pentacene-based pseudo-CMOS. As a result, the inverter characteristic with operation voltage at -5 V was realized and logic swing of 4.3 V was obtained.