[10p-W241-1~8] Pioneering of Frontier technology for metal oxide novel device I -from thin film fabrication to device creation -

[10p-W241-2] Heterojunction channel for enhancing performance and reliability of IGZO TFTs

〇Mamoru Furuta^1,2, Daichi Koretomo¹, Mehadhi Aman¹, Yusaku Magari¹ (1.Kochi Univ. of Tech., 2.Research Institute, KUT.)

Keywords:Thin-FIlmTransistor, InGaZnO, Heterojunction channel

The TFT with IGZO heterojunction channel was demonstrated to enhance performance and reliability. In this presentation, we succesfully demonstrated that the IGZO TFT with heterojunction channel consisting of an In-rich-IGZO on the IGZO-111 (In:Ga:Zn= 1:1:1 atm.%).
Both the performance and reliability of the TFT have been improved by heterojunction channel.
We will discuss the carrier transport mechanism in the IGZO hetero-channel TFT based on the results obtained by a device simulation.