[10p-W933-1~9] Nanoscale 2D/3D analyses for new device and materials development II

[10p-W933-6] Detection of Defects on SiC Wafer by Using Mirror Electron Microscope

〇MASAKI HASEGAWA¹, KENJI KOBAYASHI¹, NORIYUKI KANEOKA¹, TOMOHIKO OGATA¹, KENTARO OHIRA¹, KAZUHIRO KAWAKAMI¹, TAKASHI GUNJI¹, KATSUNORI ONUKI¹ (1.Hitachi High-Tech)

Keywords:Mirror Electron Microscope, SiC, crystal defect

Mirror electron microscope can visualize an electric potential distribution of a sample surface by imaging reflected electrons due to a negative bias of the sample. Applications of the microscope to detection of defects on SiC wafer, which is promised material for future power device, will be introduced.