[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-W934-1] Evaluation of ultra low density metal contamination by Pulse Photoconductivity Method

〇YUUKI KUMAGAE¹, Shotaro Kuzukawa¹, Matsuyama Hiroki¹, Abe Narumi¹, Shimazu Yuichiro¹, Nagatomo Kotaro², Nakayama Yusuke², Nakamura Shunsuke², Kobayashi Kazuhiro¹, Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka Masao² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

Keywords:semiconductor

The pulsed photoconduction method is a method of measuring the conductivity of an insulator using the internal photoelectric effect and the dielectric polarization of an insulator.The pulsed photoconduction method can evaluate metal contamination of very low density which can not be detected by conventional measuring methods.In addition, since non-destructive and non-contact inspection is possible, the stress to be applied to the measurement object is very small and in-line measurement can be performed.