Oral presentation

13 Semiconductors » 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[10p-W934-1~12] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

Sun. Mar 10, 2019 1:30 PM - 4:45 PM W934 (W934)

Koichiro Saga(Sony), Nobuya Mori(Osaka Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[10p-W934-1] Evaluation of ultra low density metal contamination by Pulse Photoconductivity Method

〇YUUKI KUMAGAE¹, Shotaro Kuzukawa¹, Matsuyama Hiroki¹, Abe Narumi¹, Shimazu Yuichiro¹, Nagatomo Kotaro², Nakayama Yusuke², Nakamura Shunsuke², Kobayashi Kazuhiro¹, Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka Masao² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

1:45 PM - 2:00 PM

[10p-W934-2] Development of noncontact multi-measurement using Pulse Photoconductive Method

〇Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Narumi Abe¹, Yuki Kumagae¹, Yuichiro Shimazu¹, Kotaro Nagatomo², Shunsuke Nakamura², Yusuke Nakayama², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Faculty of Technology Kumamoto Univ.)

2:00 PM - 2:15 PM

[10p-W934-3] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Hiroki Matsuyama¹, Shotaro Kuzukawa¹, Narumi Abe¹, Yuki Kumagae¹, Yusuke Nakayama², Shunsuke Nakamura², Kotaro Nagatomo², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.Graduate school of science and technology Kumamoto Univ., 2.Kumamoto Univ.)

2:15 PM - 2:30 PM

[10p-W934-4] Development of Non-Destructive Surface States Density Measurement by Pulse Photoconductivity Method

〇Narumi Abe¹, Shotaro Kuzukawa¹, Hiroki Matsuyama¹, Yuki Kumagae¹, Yusuke Nakayama², Shunsuke Nakamura², Kotaro Nagatomo², Kazuhiro Kobayashi¹, Hiroshi Kubota¹, Takeshi Hashishin¹, Masao Yoshioka² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

2:45 PM - 3:00 PM

[10p-W934-5] Scalability Study on Ferroelectric-HfO₂ Tunnel Junction Memory

〇FEI MO¹, Tagawa yusaku¹, Saraya Takuya¹, Hiramoto Toshiro¹, Kobayashi Masaharu¹ (1.IIs, univ. of Tokyo)

3:00 PM - 3:15 PM

[10p-W934-6] NEGF Simulation of Inter-layer Tunneling under Finite Bias

〇(M1)Takaya Mishima¹, Hajime Tanaka¹, Futo Hashimoto¹, Nobuya Mori¹ (1.Osaka Univ.)

3:15 PM - 3:30 PM

[10p-W934-7] Domain Divided Device Simulation with Flexible Boundary Conditions

〇Kazuya Matsuzawa¹, Masatoshi Abe¹, Yoshinori Oda¹, Takahisa Tanaka^1,2, Ken Uchida^1,2 (1.TRDEC, Keio Univ., 2.Elec.Eng. Keio Univ.)

3:30 PM - 3:45 PM

[10p-W934-8] Heavy ion induced transient current of PN-Body Tied SOIFET

〇Ryota Furukawa¹, Yan Wu¹, Yoshihiro Takahashi¹ (1.Nihon Univ)

3:45 PM - 4:00 PM

△ [10p-W934-9] Development of dynamic deterioration model of MOSFET under TID effect

〇Yuta Oshima¹, Motoki Ando¹, Kenji Hirakawa¹, Masayuki Iwase¹, Munehiro Ogasawara¹, Takashi Yoda¹, Noboru Ishihara¹, Hiroyuki Ito¹ (1.Tokyo Tech.)

4:00 PM - 4:15 PM

[10p-W934-10] Impact of Electron Drag Effects on Thermal Transport in 1D Nanostructures

〇(M2C)Yuma Kajiwara¹, Nobuya Mori¹ (1.Osaka Univ.)

4:15 PM - 4:30 PM

[10p-W934-11] Strain Effects on Ballistic Phonon Thermal Transport in Finite-Length Silicon Nanowires

〇Junichi Hattori¹ (1.AIST)

4:30 PM - 4:45 PM

[10p-W934-12] Temperature control of clean room by simulation and virtual metrology

〇Haruki Kai¹, Kumagae Yuki¹, Abe Narumi¹, Iwamura Ko², Kubota Hiroshi¹, Hashishin Takeshi¹, Yoshioka Masao² (1.GSST Kumamoto Univ., 2.Kumamoto Univ.)

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