Improvement of 4H-SiC p-channel MOSFET Interface Characteristics by Combination of Low Temperature H<sub>2</sub>O-POA and H<sub>2</sub>-POA

Presentation information

Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Tetsuo Hatakeyama(Toyama Pref. Univ.)

11:30 AM - 11:45 AM

〇Jun Koyanagi¹, Koji Kita¹ (1.The Univ. of Tokyo)

Keywords:MOS interface

We investigate effect of low temperature H₂O-POA and H₂-POA after dry oxidation for D_it and channel mobility of 4H-SiC p-channel MOSFET.