The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[11a-70A-1~10] 15.6 Group IV Compound Semiconductors (SiC)

Mon. Mar 11, 2019 9:00 AM - 11:45 AM 70A (70th Anniversary Auditorium)

Tetsuo Hatakeyama(Toyama Pref. Univ.)

11:00 AM - 11:15 AM

▼ [11a-70A-8] An anomalous negative shift of flat-band voltage of NO annealed SiO2/4H-SiC MOS capacitors

〇(D)Taehyeon Kil1, Atsushi Tamura1, Koji Kita1 (1.Dept. of Materials Engineering, The Univ. of Tokyo)

Keywords:Anomalous negative shift of flat-band voltage, SiO2/4H-SiC MOS capacitor

NO post-oxidation annealing (NO-POA) process is a beneficial method to reduce the Dit of SiO2/4H-SiC interface and improve the MOSFET performance. One of the drawbacks of this POA is the negative shift of threshold voltage. However, the origin of this phenomenon is not clarified yet. In this work, we investigated the effect of NO-POA with varying durations on flat-band voltage (VFB) of MOS capacitors. With increasing NO-POA duration after dry oxidation, fixed oxide charges at the interface decreased to less than 1010 cm-2. Moreover, there was an anomalous negative shift of extrapolated VFB (more than 0.5 V), which would be related to the nitrogen concentration at the interface.