[11a-M121-1~12] 13.7 Compound and power electron devices and process technology

[11a-M121-8] Characterization of hole traps in hydrogen-implanted n-GaN

〇(M1)Kazuya Tamura¹, Ken Iyoda¹, Yutaka Tokuda¹, Kenji Shiojima², Jyoji Ito³, Takahide Yagi³ (1.Aichi Inst. of Technol., 2.Fukui Univ., 3.S.H. I-ATEX Co, Ltd)

Keywords:MCTS, Ion implantation

We have characterized hole traps in hydrogen-implanted MOCVD n-GaN by isothermal MCTS which is applicable for Schottky diodes. Carbon-related H1 trap (E_v+0.86 eV) is present in non-implanted samples. In addition, trap labeled H0 is observed in hydrogen-implanted samples with longer hole emission time constants than H1trap. H0 trap is also observed in He-implanted samples, indicating that H0 is not hydrogen-related. We are now investigating the energy levels of H0 which are found to depend on the reverse biases using MCTS measurements.