[11a-PA5-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[11a-PA5-6] RT atomic layer deposition and its application to gas barrier

〇Fumihiko Hirose¹ (1.Yamagata Univ.)

Keywords:RT atomic layer deposition, gas barrier

RT atomic layer deposition (ALD) was developed by using plasma excited humidfied argon. Since the present technology does not utilize high energy ions for the surface treatments, it is suitable for organic, flexible eletronics. In the conference, we introduce the RT ALD and the related exeriment results. The gas barrier technology is also explained there.