[11a-PB3-1~11] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[11a-PB3-3] Fabrication technologies and characteristic control of SiGe HEMT formed by sputter epitaxy

〇Yosuke Aoyagi¹, Akira Motohashi¹, Kyohei Degura¹, Katsumi Okubo¹, Nobumitsu Hirose², Akifumi Kasamatsu², Toshiaki Matsui², Yoshiyuki Suda¹, Takahiro Tshukamoto³ (1.Tokyo Univ. of Agric. & Technol., 2.National Inst. of Information and Communications Technol., 3.Univ. Electro-Comm.)

Keywords:semiconductor