[11a-PB4-1~18] 15.4 III-V-group nitride crystals

[11a-PB4-10] Emission Enhancements of InGaN/GaN MQW beyond Skin Depth of Surface Plasmon

〇Fumiya Murao¹, Toshiki Nakamura¹, Tetsuya Matsuyama¹, Kenji Wada¹, Mitsuru Funato², Yoichi Kawakami², Koichi Okamoto¹ (1.Osaka Pref. Univ., 2.Kyoto Univ.)

Keywords:Surface Plasmon, InGaN, Plasmonics

Surface plasmon (SP) enhanced blue emissions from InGaN/GaN (3 nm/10 nm) multiple quantum wells (QWs) were investigated for 3QWs, 5QWs or 10 QWs with silver layers (50 nm). Despite the penetration depth of the SP on the Ag/GaN interface is only 16 nm, 2.3-fold enhancements were observed for 10QWs. Further enhancements were obtained when the thickness of the barrier layer was reduced to 5 nm. These results suggest that the excitons in deeper QWs can transfer to near-surface QW which has high emission rate by the Förster resonance energy transfer and consequently can resonate with the SP.