[11a-PB4-1~18] 15.4 III-V-group nitride crystals

[11a-PB4-13] Spectroscopic ellipsometry characterization of GaN surface exposed to NH₃ plasma

〇Naoto Kumagai^1,3, Hirotomo Itagaki², Jaeho Kim^3,1, Hisato Ogiso², Xue-lun Wang^1,3,4, Shingo Hirose², Hajime Sakakita^3,1, Mitsuaki Shimizu^1,4 (1.AIST-NU GaN-OIL, 2.AMRI, AIST, 3.ESPRIT, AIST, 4.IMaSS, Nagoya Univ.)

Keywords:Nitride semiconductor, Spectrosopic ellipsometry, plasma