[11a-PB4-1~18] 15.4 III-V-group nitride crystals

[11a-PB4-14] Behavior of basal plane dislocations in 4H-SiC and GaN under electron beam irradiation on m-planes

〇Yukari Ishikawa^1,2, Masaki Sudo², Yoshihiro Sugawara¹, Yong-Zhao Yao¹, Masashi Kato², Makoto Miyoshi², Takashi Egawa² (1.JFCC, 2.Nagoya Inst. Tech.)

Keywords:GaN, Basal plane dislocation, REDG

The basal plane dislocation dissociation in a 4H-SiC bipolar device under forward bias leads to forward voltage drift. It is important to investigate the possibility of the structure change of dislocations in GaN under device operation. We observed behavior of dislocations in 4H-SiC and GaN under electron beam irradiation on m-planes by CL mapping. Basal plane dislocations in 4H-SiC were expanded and formed single Shockley stacking faults under electron beam irradiation on m-plane. On the other side, basal plane dislocations were glided but not expanded in GaN by electron irradiation.