[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-2] Stabilization of α-Ga₂O₃ on m-plane α-Al₂O₃ by Plasma-Assisted MBE

〇(DC)Riena Jinno¹, Yongjin Cho¹, Kevin Lee¹, Vladimir Protasenko¹, Huili Xing¹, Debdeep Jena¹ (1.Cornell Univ.)

Keywords:ultra-wide bandgap semiconductor, Gallium oxide, Molecular beam epitaxy

α-Ga₂O3 has attracted much interest in recent years because its alloys with In₂O₃ and Al₂O₃ enable bandgap engineering from 3.7 to 8.7 eV. MBE is a most promising method for the growth of heterostructures, but the film thickness of isomorphic α-Ga₂O₃ grown by MBE is limited by the formation of the thermodynamically most stable phase β-Ga₂O₃. In this study, we demonstrate the stabilized growth of the α-Ga₂O₃ phase on m-plane sapphire substrates up to a film thickness of ca. 200 nm.