The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[11a-S011-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 11, 2019 9:00 AM - 11:30 AM S011 (South Lecture Bldg.)

Kentaro Kaneko(Kyoto Univ.)

9:30 AM - 9:45 AM

[11a-S011-3] Purification of β-Ga2O3 Crystals by the Zone-Refining Method

Toshimitsu Ito1, Yasuko Ozaki1, Yasuhide Tomioka1, Hideki Inaba1, Hideyuki Watanabe1 (1.AIST)

Keywords:beta-Ga2O3, zone refining method, purification

The distribution coefficient of Si in β-Ga2O3 has been estimated, which confirms that the zone-refining method is effective. By this method, high level of purification would be possible. We have simulated distribution of Si in a grown β-Ga2O3 crystal.