The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-W541-1~12] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 9:00 AM - 12:15 PM W541 (W541)

Ryota Ishii(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

11:30 AM - 11:45 AM

[11a-W541-10] Analysis of emission characteristics of deep levels in GaN by direct photo excitation

〇(B)Moe Kikuchi1, Daisuke Uehara1, Bei Ma1, Ken Morita1, Hideto Miyake2, Yoshihiro Ishitani1 (1.Chiba Univ., 2.Mie Univ.)

Keywords:GaN, deep levels, photoluminescence