The 66th JSAP Spring Meeting, 2019

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15 Crystal Engineering » 15.4 III-V-group nitride crystals

[11a-W541-1~12] 15.4 III-V-group nitride crystals

Mon. Mar 11, 2019 9:00 AM - 12:15 PM W541 (W541)

Ryota Ishii(Kyoto Univ.), Jun Tatebayashi(Osaka Univ.)

11:45 AM - 12:00 PM

[11a-W541-11] Evaluation of crystallinity in the depth direction of highly Si doped GaN by IR and Raman spectroscopy

〇(M2)Mingchuan Tang1, Bei Ma1, Ken Morita1, Kohei Inoue2, Atsushi Kobayashi2, Hiroshi Fujioka2, Yoshihiro Ishitani1 (1.Chiba Univ., 2.The Univ.of Tokyo)

Keywords:GaN