[11p-M113-1~20] 6.2 Carbon-based thin films

△ [11p-M113-3] Vertical-type 2DHG Diamond MOSFET ; Achievement of High Drain Current Operation (~1 A) by Gate Width 10 mm

〇(B)Jun Nishimura¹, Nobutaka Oi¹, Masayuki Iwataki¹, Ikuto Tsuyuzaki¹, Satoshi Okubo¹, Taisuke Kageura¹, Atsushi Hiraiwa^1,2, Hiroshi Kawarada^1,3 (1.Waseda Univ., 2.Nagoya Univ., 3.Waseda ZAIKEN.)

Keywords:diamond, vertical-type MOSFET, device

We fabricated vertical-type 2 dimensional hole gas (2DHG) diamond MOSFETs with the gate width up to 10 mm, which have multiple trenches in one device. As a result, it was able to achieve the high current operation with maximum drain current of 0.96 A (@V_DS:-25 V, V_GS:-20 V). From the structure of this study, it was confirmed for high current operation for the vertical-type 2DHG diamond MOSFETs. So, it were expected the realization of vertical-type high power MOSFETs for power device applications.