[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-16] Evaluation of lightly-implanted Mg and co-implantation into p-GaN epi layers by capacitance measurement

〇Shinya Takashima¹, Katsunori Ueno¹, Ryo Tanaka¹, Hideaki Matsuyama¹, Masaharu Edo¹, Kohei Shima², Kazunobu Kojima², Shigefusa F. Chichibu^2,3, Akira Uedono⁴ (1.Fuji Electric, 2.Tohoku Univ., 3.Nagoya Univ. IMass, 4.Tsukuba Univ.)

Keywords:GaN, implantation

For p-GaN formation by Mg implantation, it is important to reduce remaining defects, and recently co-implantation of H or N has been reported to be effective. In this research, capacitance measurement was carried out by implanting Mg and H or N with low concentration into p-GaN epi layer. By comparing the defect influence, although H co-implantation caused the decrease of the capacitance and increase of the hysteresis, N co-implantation showed improvement those properties, which is expected to contribute to the hole trap reduction.