[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-20] Study of Insulated Gate GaN-based Transistor using Chemical Vapor Deposition Method Enhanced by Atmic Oxygen at the ground level

〇Kento Nakamura¹, Makoto Baba¹, Hiroshi Okada¹, Masakazu Furukawa², Hiroto Sekiguchi¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

Keywords:nitride semiconductor, semiconductor process engineering