[11p-PB3-1~27] 13.7 Compound and power electron devices and process technology

[11p-PB3-19] Nitride semiconductor device application of silicon dioxide by chemical vapor deposition enhanced by atomic oxygen at the ground level

〇Makoto Baba¹, Yuto Kakiuchi¹, Hiroshi Okada¹, Masakazu Furukawa², Keisuke Yamane¹, Hiroto Sekiguchi¹, Akihiro Wakahara¹ (1.Toyohashi Univ. Tech., 2.ARLC)

Keywords:nitride semiconductor, silicondioxide, CVD