9:30 AM - 11:30 AM
[12a-PA3-17] Analysis of Schottky diode properties in In-Ga-Zn-O/AgxO hetro interface using device simulation
Keywords:In-Ga-Zn-O, Schottky diodes, Device Simulation
The IGZO films were deposited by sputtering using mixtures of Ar+O2+H2 as the sputtering gas and Schottky diodes(SDs) were fabricated by a low tempertature process at 150℃. By H2 gas ratio R[H2]=(H2/(Ar+O2/H2)) increased from 0 to 5% rectifying ratio of SDs improved from 1.0×105 to 3.6×109 . It was suggested that the electron affinity and defect level of IGZO are reduced by increasing R[H2]. We investigeted the effect of IGZO electron affinity and defect level on SDs properties using device simulation.