The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[12a-PA3-1~26] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 12, 2019 9:30 AM - 11:30 AM PA3 (PA)

9:30 AM - 11:30 AM

▲ [12a-PA3-16] Electrical Properties of In2O3 and ITO Thin Films Prepared by Solution Process
using In(acac)3 Precursor

〇(DC)Puneet Jain1, Ken-ichi Haga1, Eisuke Tokumitsu1 (1.JAIST)

Keywords:Indium oxide, Indium tin oxide (ITO)

In this work, electrical properties of solution processed In2O3 and ITO films were studied using In(acac)3 based source solutions. Sn precursors used in this work were tin acetylacetonate (Sn(acac)2) and tin chloride (SnCl2) while propionic acid (PrA) was used as a solvent. A resistivity of 2.5x10-3 Ω.cm was obtained when the Sn content is 1%, which is comparable or larger than that of the films prepared by spay and dip coating methods. This is due to relatively small carrier concentration (1x1020 cm-3) of the films fabricated in this work, because we employed O2 annealing.