[12a-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[12a-W641-1] Low-temperature synthesis of high-quality graphene by forced convention of plasma-excited radicals

〇Jaeho Kim¹, Hajime Sakakita¹, Hiromoto Itagaki¹ (1.AIST)

Keywords:plasma CVD, graphene, low temperature growth

The forced-convection plasma-enhanced chemical vapor deposition (FC-PECVD) method has been developed for the synthesis of graphene. In the FC-PECVD method, a specially designed blowing plasma source is used at a moderate gas pressure of 1 - 10 Torr and the distribution of reactive radicals reaching the substrate surface can be controlled by forced convection. Self-limiting growth of graphene occurs on copper foil and monolayer graphene growth with few defects is achieved even at low temperature (<400 °C). The enlargement of growth area has also been demonstrated using the scalable blowing plasma source. We expect that the FC-PECVD method overcomes the limitations of conventional low-temperature PECVD and provides a breakthrough for the achievement of industrial applications based on graphene.