Poster presentation

[11a-PA5-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 11, 2019 9:30 AM - 11:30 AM PA5 (PA)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[11a-PA5-1] Two-dimensional thin films preparation by sputtering deposition using powder target I

〇Hiroharu Kawasaki¹, Tamiko Ohshima¹, Yoshihito Yagyu¹, Takeshi Ihara¹, Masanori Shinohara¹ (1.Nat. Ins. Tech, Sasebo Col.)

9:30 AM - 11:30 AM

[11a-PA5-2] Magnetic Mirror Type Magnetron Sputtering Cathode for Low Gas Pressure Operation

〇Yuuto Kawato¹, Taisei Motomura², Minami Kajiwara¹, Tatsuo Tabaru², Masato Uehara², Tetsuya Okuyama¹ (1.NIT, Kurume College, 2.AIST)

9:30 AM - 11:30 AM

▲ [11a-PA5-3] Morphological Characterization of RF Magnetron Sputtered Zinc Oxide Thin Films-Laser Assisted.

〇(M2)Edrick Abu Saidu¹, AKIO SANPEI¹, WATARU WAKAKI¹, YASUAKI HAYASHI¹ (1.KYOTO INST. OF TECH.)

9:30 AM - 11:30 AM

[11a-PA5-4] Low Temperature Synthesis and Property Evaluation of a - C: F Thin Films
Fabricated by Electronic Excitation of c-C₄F₈ / SiF₄Mixed Condensed Layer

〇(M1)Toshihiro Mitani¹, Tetsuya Sato¹, Yuichiro Shiozawa², Yoshinobu Uegaki² (1.Univ. Yamanashi, 2.Yamanashi Indust. Tech. Center)

9:30 AM - 11:30 AM

[11a-PA5-5] Nitriding treatment by Active Screen Plasma and its evaluation Ⅲ

〇(PC)Susumu Ichimura¹, Ippei Tsuru², Daichi Ohkubo², Hideaki Matsuo², Mineo Goto² (1.Nagoya Industries Promotion Corporation, 2.NAKANIHON-RO KOGYO CO., LTD.)

9:30 AM - 11:30 AM

[11a-PA5-6] RT atomic layer deposition and its application to gas barrier

〇Fumihiko Hirose¹ (1.Yamagata Univ.)

9:30 AM - 11:30 AM

[11a-PA5-7] Effect of Alkali Metal Adsorption on Thermionic Emission of Nitride Semiconductors

〇Shota Uchida¹, Koichiro Yasuhara¹, Shigeya Kimura², Hisashi Yoshida², Akihisa Ogino¹ (1.Shizuoka Univ., 2.Toshiba Corp.)

9:30 AM - 11:30 AM

[11a-PA5-8] Droplet-Vaporization Behavior in Plasma during Plasma-assisted Mist Chemical Vapor Deposition

〇Kosuke Takenaka¹, Yuichi Setsuhara¹ (1.Osaka Univ.)

9:30 AM - 11:30 AM

[11a-PA5-9] Preparation of Au-ZnO nanocomposite film using open-air microplasma jet and its photocatalytic property

〇Yoshiki Shimizu^1,2, Yoshie Ishikawa¹, Kazuto Hatakeyama^1,2, Yukiya Hakuta^2,1 (1.NMRI, AIST, 2.Operando OIL, AIST)

9:30 AM - 11:30 AM

[11a-PA5-10] Cryo- etching of silicon oxide film by low-energy electron irradiation generated by DC discharge on NF3 condensation layer formed on SiO2 substrate.

〇Hitoshi Kumagai¹ (1.Yamanashi Univ.)

9:30 AM - 11:30 AM

▲ [11a-PA5-11] BCl₃-based plasma etching of (010) β-Ga₂O₃ substrates

〇(M1C)Yohan DOUEST^1,3, Cedric MANNEQUIN¹, Toshimitsu ITO², Christophe VALLEE^1,3, Etienne GHEERAERT^1,3, Masahiro SASAKI¹ (1.Tsukuba Univ., 2.AIST, 3.Grenoble-Alpes Univ.)

9:30 AM - 11:30 AM

[11a-PA5-12] Development of Deposition Model of DLC Film using Low-Pressure Capacitively-coupled Hydrocarbon Plasma

〇(M1)Shin Ogawa¹, Akinori Oda¹, Takayuki Ohta², Hiroyuki Kousaka³ (1.Chiba Tech, 2.Meijo Univ., 3.Gifu Univ.)

Oral presentation

[11p-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Mon. Mar 11, 2019 1:45 PM - 5:30 PM W641 (W641)

Daisuke Ogawa(Chubu Univ.), Kazunori Shinoda(HITACHI)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:45 PM - 2:00 PM

△ [11p-W641-1] Optimization of Electrical Characterization Method of Plasma Process-Induced Damage in Si Substrates for the Analysis of Defect Profiles

〇Takashi Hamano¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

2:00 PM - 2:15 PM

△ [11p-W641-2] Detailed structure analysis of plasma-induced damage in silicon nitride films using conductance method

〇Tomohiro Kuyama¹, Keiichiro Urabe¹, Koji Eriguchi¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[11p-W641-3] 【Highlight】Generation & annihilation of plasma-induced defects ~ H-induced defects in c-Si ~

〇Shota Nunomura¹, Isao Sakata¹, Koji Matsubara¹ (1.AIST RCPV)

2:30 PM - 2:45 PM

△ [11p-W641-4] Mechanism of light element injection in III-V semiconductor compounds

〇Yoshinori Kodama¹, Yoshifumi Zaizen¹, Masanaga Fukasawa¹, Katsuhisa Kugimiya¹, Kojiro Nagaoka¹ (1.Sony Semiconductor Solutions)

2:45 PM - 3:00 PM

▼ [11p-W641-5] Molecular Dynamics Simulation of SiO₂ Etching by Energetic Fluorocarbon Ions

〇(M2)Charisse Cagomoc¹, Michiro Isobe¹, Satoshi Hamaguchi¹ (1.Osaka University)

3:00 PM - 3:15 PM

[11p-W641-6] Prediction of Sputtering Yields by Machine Learning

〇Kazumasa Ikuse¹, Hiori Kino², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.NIMS)

3:15 PM - 3:30 PM

[11p-W641-7] Electronic properties and dissociation channels of BF₃ and BCl₃ compounds

〇Toshio Hayashi¹, Makoto Sekine¹, Kenji Ishikawa¹, Masaru Hori¹ (1.Nagoya Univ.)

3:45 PM - 4:00 PM

[11p-W641-8] Transition Metal (Ni, Co) Thermal Etching by Hexafluoroacetylacetone (hfac)

〇Tomoko Ito¹, Karahashi Kazuhiro¹, Satoshi Hamaguchi¹ (1.Osaka Univ.)

4:00 PM - 4:15 PM

[11p-W641-9] Etching reactions with ions containing fluorine atoms

〇Kazuhiro Karahashi¹, Tomoko Ito¹, Junichi Hashimoto², Mitsuhiro Omura², Hisataka Hayashi², Satoshi Hamaguchi¹ (1.Osaka Univ., 2.Toshiba Momory Corporation)

4:15 PM - 4:30 PM

△ [11p-W641-10] Copper dry etching by water-vapor aided hydrogen plasma

〇Yoshiki Shirasu¹, Takuhiro Ando¹, Hiroaki Kakiuchi¹, Kiyoshi Yasutake¹, Hiromasa Ohmi¹ (1.Osaka Univ.)

4:30 PM - 4:45 PM

▼ [11p-W641-11] Etching reactions of Si, SiO₂, and SiN films using with hydrofluorocarbon compounds

〇(M1)Jiawei Ni¹, Toshio Hayashi¹, Kenji Ishikawa¹, Takayoshi Tsutsumi¹, Hiroki Kondo¹, Makoto Sekine¹, Masaru Hori¹ (1.Nagoya University)

4:45 PM - 5:00 PM

△ [11p-W641-12] Corrosive behavior of Y-O-F system ceramics under CHF₃/O₂ plasma

〇Kenji Miyashita¹, Toru Tsunoura¹, Katsumi Yoshida¹, Toyohiko Yano¹ (1.Tokyo Tech)

5:00 PM - 5:15 PM

[11p-W641-13] Investigation of Side-wall Etching for Germanium Fin Strcutre by Neutral Beam Etching

〇(PC)Daisuke Ohori¹, Shuichi Noda², Takuya Fujii¹, Wataru Mizubayashi², Kazuhiko Endo^1,2, En-Tzu Lee¹, Yiming Li³, Yao-Jen Lee⁴, Takuya Ozaki¹, Seiji Samukawa^1,2,5 (1.IFS, Tohoku Univ., 2.AIST, 3.NCTU, 4.NDL, 5.AIMR, Tohoku Univ.)

5:15 PM - 5:30 PM

[11p-W641-14] Effects of the Antenna Structure for Inductively Coupled Plasma to Etch Rate Uniformity

〇Yuta Sugimoto¹, Masashi Yamage¹, Yoshie Okamoto², Tomoaki Yoshimori², Hidetada Azumano² (1.TOSHIBA, 2.SHIBAURA MECHATRONICS)

Oral presentation

[12a-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Tue. Mar 12, 2019 9:00 AM - 12:45 PM W641 (W641)

Keigo Takeda(Meijo Univ.), Haruka Suzuki(Nagoya Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[12a-W641-1] Low-temperature synthesis of high-quality graphene by forced convention of plasma-excited radicals

〇Jaeho Kim¹, Hajime Sakakita¹, Hiromoto Itagaki¹ (1.AIST)

9:15 AM - 9:30 AM

[12a-W641-2] Deposition of particles generated in silane plasmas under high gas velocity and their influence on qualities of deposited films

Kazuma Tanaka¹, LIu Shi¹, Hisayuki Hara¹, Shota Nagaishi¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Naho Itagaki¹, 〇Kazunori Koga^1,2, Masaharu Shiratani¹ (1.Kyushu Univ,, 2.NINS)

9:30 AM - 9:45 AM

△ [12a-W641-3] Flowability improvement of water-atomized stainless powder by thermal plasma spheroidization

〇Hirotomo Itagaki¹, Kotaro Hanada¹, Shingo Hirose¹ (1.AIST)

9:45 AM - 10:00 AM

[12a-W641-4] Plasma-induced Modification of Silver Nanoparticles for Plasmonic Sensing Devices

〇(D)Kei Hosomi¹, Koichi Ozaki¹, Katsumi Takahiro¹, Fumitaka Nishiyama², Shin Yokoyama² (1.Kyoto Inst. Tech., 2.Hiroshima Univ.)

10:00 AM - 10:15 AM

△ [12a-W641-5] Surface Modification of Polytetrafluoroethylene
by Atmospheric Pressure Plasma of Ar/Water and Ethanol Vapor Mixture

〇(B)Masahiko Tani¹, Hideki Yajima², Hiroshi Furuta¹, Akimitsu Hatta¹ (1.Kochi Univ. Technol., 2.ORC Manufacturing)

10:15 AM - 10:30 AM

△ [12a-W641-6] Large-area and High-speed Surface Treatment by Long-scale Microwave Plasma at Atmospheric Pressure

〇Hirotsugu Koma¹, Atsushi Sugiyama¹, Haruka Suzuki¹, Tsuyoshi Honda², Hirotaka Toyoda¹ (1.Nagoya Univ., 2.Nisshin Inc.)

10:30 AM - 10:45 AM

△ [12a-W641-7] Investigation of uniform microwave plasma generation excited by slot antenna using electromagnetic field simulation

〇Taishin Shimada¹, Takeshi Aizawa¹, Tatsuo Ishijima¹, Yasunori Tanaka¹, Yoshihiko Uesugi¹ (1.Kanazawa Univ.)

10:45 AM - 11:00 AM

[12a-W641-8] Verification of Absolute Temperature of Noncontact Temperature Measurement of Silicon Wafer with Back Surface Temperature Measurement Using Thermocouple

〇(M1)Asaki Kameda¹, Hiroaki Hanafusa¹, Seiichiro Higashi¹ (1.Hiroshima Univ.)

11:15 AM - 11:30 AM

[12a-W641-9] [Young Scientist Presentation Award Speech] Two-Step Growth of (ZnO)_x(InN)_1-x Films on Sapphire Substrates by Sputter Epitaxy

〇Nanoka Miyahara¹, Seichi Urakawa¹, Daisuke Yamashita¹, Kunihiro Kamataki¹, Kazunori Koga¹, Masaharu Shiratani¹, Naho Itagaki¹ (1.Kyushu Univ.)

11:30 AM - 11:45 AM

[12a-W641-10] ITO thin films fabricated by hybrid facing cathode sputtering using rf-dc coupled power supply II

〇Shinichi Morohashi¹ (1.Yamaguchi Univ.)

11:45 AM - 12:00 PM

[12a-W641-11] Suppression of film resputtering and damages in MgF₂-Ar-CF₄ non-reactive and Mg-CF₄ reactive sputtering by using a double grid retarding electrodes

〇Eiji Kusano¹ (1.Kanazawa Inst.Technol.)

12:00 PM - 12:15 PM

△ [12a-W641-12] The density measurement of ground-state nitrogen-atom on TiN film deposition process using high power impulse magnetron sputtering

〇(M1)Masayuki Nakamura¹, Keigo Takeda¹, Takayuki Ohta¹ (1.Meijo Univ.)

12:15 PM - 12:30 PM

[12a-W641-13] Formation of IGZO Thin Film Transistor at Large Area Substrate with Plasma Enhanced Reactive process

Yuichi Setsuhara¹, 〇Kosuke Takenaka¹, Tomoki Yoshitani¹, Hiroyuki Hirayama¹, Masashi Endo¹, Giichiro Uchida¹, Akinori Ebe² (1.Osaka Univ., 2.EMD Corp.)

12:30 PM - 12:45 PM

[12a-W641-14] Development of programmable RAS system

〇Yasuhito Tanaka^1,2, Hideo Isshiki², Shinichiro Saisho¹ (1.SHINCRON, 2.UEC)

Sessions

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[11a-PA5-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

▲ [11a-PA5-3] Morphological Characterization of RF Magnetron Sputtered Zinc Oxide Thin Films-Laser Assisted.

▲ [11a-PA5-11] BCl3-based plasma etching of (010) β-Ga2O3 substrates

[11p-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [11p-W641-1] Optimization of Electrical Characterization Method of Plasma Process-Induced Damage in Si Substrates for the Analysis of Defect Profiles

△ [11p-W641-2] Detailed structure analysis of plasma-induced damage in silicon nitride films using conductance method

△ [11p-W641-4] Mechanism of light element injection in III-V semiconductor compounds

▼ [11p-W641-5] Molecular Dynamics Simulation of SiO2 Etching by Energetic Fluorocarbon Ions

△ [11p-W641-10] Copper dry etching by water-vapor aided hydrogen plasma

▼ [11p-W641-11] Etching reactions of Si, SiO2, and SiN films using with hydrofluorocarbon compounds

△ [11p-W641-12] Corrosive behavior of Y-O-F system ceramics under CHF3/O2 plasma

[12a-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [12a-W641-3] Flowability improvement of water-atomized stainless powder by thermal plasma spheroidization

△ [12a-W641-5] Surface Modification of Polytetrafluoroethyleneby Atmospheric Pressure Plasma of Ar/Water and Ethanol Vapor Mixture

△ [12a-W641-6] Large-area and High-speed Surface Treatment by Long-scale Microwave Plasma at Atmospheric Pressure

△ [12a-W641-7] Investigation of uniform microwave plasma generation excited by slot antenna using electromagnetic field simulation

△ [12a-W641-12] The density measurement of ground-state nitrogen-atom on TiN film deposition process using high power impulse magnetron sputtering

Authentication

▲ [11a-PA5-11] BCl₃-based plasma etching of (010) β-Ga₂O₃ substrates

▼ [11p-W641-5] Molecular Dynamics Simulation of SiO₂ Etching by Energetic Fluorocarbon Ions

▼ [11p-W641-11] Etching reactions of Si, SiO₂, and SiN films using with hydrofluorocarbon compounds

△ [11p-W641-12] Corrosive behavior of Y-O-F system ceramics under CHF₃/O₂ plasma

△ [12a-W641-5] Surface Modification of Polytetrafluoroethylene
by Atmospheric Pressure Plasma of Ar/Water and Ethanol Vapor Mixture