[12a-W641-1~14] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

△ [12a-W641-12] The density measurement of ground-state nitrogen-atom on TiN film deposition process using high power impulse magnetron sputtering

〇(M1)Masayuki Nakamura¹, Keigo Takeda¹, Takayuki Ohta¹ (1.Meijo Univ.)

Keywords:HiPIMS, nitrogen atom, TiN

A ground-state nitrogen-atom density was measured with vacuum ultraviolet absorption spectroscopy employing micro hollow cathode lamp as a light source, in Ti - HiPIMS plasma using N₂/Ar gases for TiN hard coating application. Absorption intensity, which means nitrogen atom density, was proportionally increased with applied voltage and it is indicated that the dissociation of N₂ molecule was proceeded.