The 66th JSAP Spring Meeting, 2019

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[12p-W541-1~12] 15.4 III-V-group nitride crystals

Tue. Mar 12, 2019 1:30 PM - 5:00 PM W541 (W541)

Kazunobu Kojima(Tohoku Univ.), Mitsuru Funato(Kyoto Univ.)

4:45 PM - 5:00 PM

[12p-W541-12] UV-B lasers fabricated on relaxed AlGaN layer formed on various AlN templates

〇(B)Shouhei Teramura1, Yuta Kawase1, Junya Ikeda1, Yusuke Sakuragi1, Shinji Yasue1, Shunya Tanaka1, Yuya Ogino1, Motoaki Iwaya1, Takeuti Tettsuya1, Satoshi Kamiyama1, Sho Iwayama1,3, Isamu Akasaki1,2, Hideto Miyake3 (1.Meijo Univ., 2.Akasaki Research Center,Nagoya Univ., 3.Graduate School of Regional Innovation Mie Univ.)

Keywords:nitride, Aluminum gallium nitride, laser

In this study, relaxed n - AlGaN films were formed on various AlN templates and the optical properties were evaluated. We have found that there is no large difference in optical characteristics due to AlN template differences and that the optical properties are improved by making the film thickness of n - AlGaN pressure film.