[12p-W541-1~12] 15.4 III-V-group nitride crystals

△ [12p-W541-11] Improvement of quality in AlGaN underlying layer by growth mode control and its application to UV-B laser

〇(M2)Yuta Kawase¹, Junya Ikeda¹, Yusuke Sakuragi¹, Shinji Yasue¹, Shohei Teramura¹, Shunya Tanaka¹, Yuya Ogino¹, Motoaki Iwaya¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Sho Iwayama^1,3, Isamu Akasaki^2,1, Hideto Miyake³ (1.Department of Materials Science and Engineering, Meijo university, 2.Akasaki Research Center, Nagoya University, 3.Graduate School of Regional Innovation Studies, Mie University)

Keywords:AlGaN, laser

In this report, we report that controlling the growth mode of thick AlGaN underlayer on annealed sputtered AlN film is useful for obtaining high quality AlGaN.
In addition, an active layer was laminated on the AlGaN underlayer, and the laser characteristics and dislocation density were investigated.
On that day, the dislocation reduction mechanism and the growth mode will also be discussed in detail using cross sectional TEM images.