[12p-W541-1~12] 15.4 III-V-group nitride crystals

[12p-W541-2] Homoepitaxy on Annealed Sputter-Deposited AlN Film / Nano PSS

〇Yukino Iba¹, Kanako Shojiki², Kenjiro Uesugi³, Xiao Shiyu⁴, Hideto Miyake^2,4 (1.Fac. of Eng. ,Mie Univ., 2.Grad. Sch. of Eng., Mie Univ., 3.SPORR, Mie Univ., 4.Grad. School of RIS, Mie Univ.)

Keywords:AlN, MOVPE, Nano-Patterned Sapphire Substrates

An AlN layer was deposited by sputtering method on nano-patterned sapphire substrate with hexagonal hole and was annealed at high temperature. We fabricated an AlN layer on the annealed an AlN layer by metalorganic vapor phase epitaxy. The coalescence thickness is 1.2 µm, and mix-type dislocations occur from a portion. Voids observed at above the hole during epitaxial lateral over growth and c-oriented grains at hole aspect by transmission electron microscope.