[12p-W541-1~12] 15.4 III-V-group nitride crystals

[12p-W541-5] Strain control of AlGaN layers on high-temperature annealed AlN/sapphire

〇Takafumi Inamori¹, Ryoya Suzuki², Xiaotong Liu³, Kenjiro Uesugi⁴, Kanako Shojiki², Hideto Miyake^2,3 (1.Mie Univ. Sch. of Eng., 2.Mie Univ. Grad. Sch. of Eng., 3.Mie Univ. Grad. Sch. of RIS, 4.Mie Univ. SPORR)

Keywords:AlN, Strain, MOVPE

In order to realize a highly efficient AlGaN-based device, a low-cost and high-quality underlying AlGaN film is required. We have reported the realization of AlN film with high crystallinity by face-to-face annealing (FFA) for sputter deposited AlN film on sapphire substrate. However, It has been found that AlN film with FFA have large compressive strain. In this study, we studied strain control in AlGaN growth by growing high Al composition AlGaN layer and AlN / AlGaN superlattice layer by MOVPE on FFA substrate of sputter deposited AlN film.