[9a-M114-1~12] 13.4 Si processing /Si based thin film / MEMS / Equipment technology

[9a-M114-10] Real-time precursor transport observation in Si minimal CVD reactor by QCM

Toshinori Takahashi¹, Mitsuko Muroi¹, 〇Hitoshi Habuka¹, Shin-ichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ., 2.MINIMAL, 3.AIST)

Keywords:MINIMAL FAB, Epitaxy, Silicon

For the MINIMAL FAB using the small diameter wafer, the Siicon CVD reactor and process have been developed. The QCM sensor was used to monitor the CVD process, real time. In this study, the transport phenomena, particularly, the gas flow direction, in the reactor were shown to change dependng on the propertiers of precursor gas.