[9a-PB2-1~9] 3.15 Silicon photonics

[9a-PB2-9] Annealing time dependence on lasing characteristics of directly bonded InP/Si substrate

〇Masaki Matsuura¹, Natsuki Hayasaka¹, Xu Han¹, Masaki Aikawa¹, Kazuki Uchida¹, Hirokazu Sugiyama¹, Kazuhiko Shimomura¹, Takahiro Ishizaki¹, Kouki Tsushima¹, Takuto Shirai¹ (1.Sophia Univ.)

Keywords:semiconductor