[9p-PB4-1~11] 16.1 Fundamental properties, evaluation, process and devices in disordered materials

[9p-PB4-7] Phase Stability of Amorphous Oxide Semiconductor In-Si-O Thin Films

〇Tatsuki Hori¹, Ha Hong¹, Toshihide Nabatame², Kazuhito Tsukagoshi², Akihiko Fujiwara¹ (1.Kwansei Gakuin Unive., 2.NIMS)

Keywords:amorphous, oxide semiconductor

In-Si-O(ISO) is a potential material for thin-film transistors (TFTs) that can be used in high-definition flat panel displays, because the constituent of Si with high bond dissociation energy reduces oxygen deficiency and stabilize amorphous phase. However, effect of Si on structure has not yet clarified in detail. In this work, we have fabricated ISO thin films with different Si concentration, and investigated stability of amorphous phase of ISO.