[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1] [Young Scientist Presentation Award Speech] Drastic improvement of Schottky diode properties by Ar+O₂+H₂ sputtered In–Ga–Zn–O

〇Yusaku Magari¹, Kenichiro Hamada¹, Kentaro Masuda¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech., 2.Research Institute, KUT)

Keywords:InGaZnO, Schottky diodes, Flexible devices

The amorphous oxide semiconductor, such as the In–Ga–Zn–O (IGZO) is a promising material for flexible and transparent devices, due to outstanding properties, for example the wide bandgap and high mobility compare with a-Si even deposited at room temperatures. In the previous presentation, we successfully demonstrated that the IGZO Schottky diodes (SDs) (rectification ratio: 1.7×10¹⁰, Schottky barrier height: 1.17 eV, ideality factor: 1.07) at the process temperature of 150 °C by using oxide heterojunction between Ar+O₂+H₂ sputtered IGZO and reactive spattered silver oxide (Ag_xO). We will report on the Schottky barrier formation mechanism at the IGZO/Ag_xO interface and IGZO SDs low temperature process technology for flexible devices.