The 66th JSAP Spring Meeting, 2019

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[9p-S011-1~13] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Sat. Mar 9, 2019 1:45 PM - 5:15 PM S011 (South Lecture Bldg.)

Yukiharu Uraoka(NAIST), Takayoshi Oshima(Saga Univ.)

4:15 PM - 4:30 PM

[9p-S011-10] Evaluation of Dislocations in beta-Ga2O3 by X-ray Topography

〇Katsuhiko Nakai1, Kengo Noami1, Toshiro Futagi1, Etsuko Ohba2, Keigo Hoshikawa3 (1.NSST, 2.Fujikoshi Machinery, 3.Shinshu Univ.)

Keywords:Ga2O3, X-ray topography, Dislocation

Dislocations in beta-Ga2O3 were evaluated by X-ray topography. Contrast dependence on reciprocal lattice vectors (g vector) revealed the existence of a dislocation with the Burgers vector parallel to <001>.