[9p-S223-1~12] 7.3 Micro/Nano patterning and fabrication

[9p-S223-3] Modeling of exposure and development processes in EUV lithography

〇Akira Sasaki¹, Ishino Masahiko¹, Nishikino Masaharu¹, Maekawa Yasunari¹ (1.QST)

Keywords:EUV lithography, photoresist, modeling

Modeling of exposure and development process of resists for EUV lithography is presented. We perform a numerical simulation based on the percolation model for exposure process and another based on diffusion limited aggregation (DLA) model for development process for metal containing nano-particle resists, showing that a reasonable agreement is obtained with respect to the experimental and calculated contrast curve.