[10p-Z05-1~19] 6.4 Thin films and New materials

△ [10p-Z05-14] Growth of high-quality CuI thin films by molecular beam epitaxy

〇(M2)Sotaro Inagaki¹, Masao Nakamura^2,3, Naoya Aizawa^2,3, Licong Peng², Xiuzhen Yu², Yoshinori Tokura^1,2,4, Masashi Kawasaki^1,2 (1.Univ. of Tokyo, 2.RIKEN-CEMS, 3.JST-PRESTO, 4.Tokyo College)

Keywords:wide gap semiconductor, thin film fabrication, crystallinity

CuI is a potential material for transparent electrodes in LEDs and solar cells. However, the crystallinity of CuI films reported so far has been far below that of bulk single crystals. In this study, we aimed at fabricating high-quality CuI films by employing molecular beam epitaxy. We successfully obtained thin films with much-improved crystallinity by depositing at a high temperature on a low-temperature-grown self-buffer layer. We verified by PL spectroscopy that the density of defect levels is much reduced in these films.